PART |
Description |
Maker |
V29LC51002 |
2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic Corp Mosel Vitelic, Corp Mosel Vitelic Corp
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AM29F400AB-70FI AM29F400AB-70SC AM29F400AT-70SC AM |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO44 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO44 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
M5M44170-10S M5M44170-7S |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模,194,304位(262,144字由16位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MSM54V16272 |
262,144-Word x 16-Bit Multiport DRAM 262,144字16位多端口内存
|
OKI SEMICONDUCTOR CO., LTD.
|
28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 CONNECTOR ACCESSORY POT 100K OHM THUMBWHEEL CERM ST
|
http:// NXP Semiconductors N.V. Maxwell Technologies, Inc
|
MSM512800C-40JS MSM512800C-45TS-K MSM512800C-45JS |
262,144-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 262,144字8位动态随机存储器:快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
|
MSM514265ESL-XXTS-K MSM514265E MSM514265E-60JS MSM |
262,144-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 262,144字16位动态随机存储器:快速页面模式型与江
|
OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets]
|
AM50DL9608GT75IS AM50DL9608GT70IS AM50DL9608GT70IT |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc. Spansion, Inc.
|
AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 6800uF 100WV 20% *NO Pb* 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48 VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC http://
|
HN27C4000G-15 HN27C4000G-10 HN27C4000G-12 HN27C400 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
M5M5V4R08J-15 M5M5V4R08J-20 M5M5V4R08J-12 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5Y816WG-70HI M5M5Y816WG-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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